IGI60L5050A1M

Marking：60L5050A；Package：PG-TFLGA-27-2；CoolGaNTM Integrated Power Stage (IPS) IGI60L5050A1M 500 m / 600 V GaN half-bridge with level-shift gate drivers

Features •Two500mGaNswitchesinhalf-bridgeconfigurationwithintegratedhigh-and low-sidegatedrivers Source /sinkdrivingcurrent+0.29A/-0.7A Application- configurableturn-onandturn-offspeed Integrated ultra-fastlow-resistancebootstrapdiode •Fastinput-to-outputp

IGLD60R190D1

Marking：60R190D1；Package：PG-LSON-8-1；600V CoolGaN??enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGLD60R190D1S

Marking：60S190D1；Package：PG-LSON-8-1；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforstandardgradeapplicationsaccordingtoJEDEC Standards

IGLR60R190D1

Marking：60R190D1；Package：PG-TSON-8-6；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGLR60R260D1

Marking：60R260D；Package：PG-TSON-8-7；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGLR60R340D1

Marking：60R340D；Package：PG-TSON-8-7；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGO60R042D1

Marking：60R042D1；Package：PG-DSO-20-85；600V CoolGaN™ enhancement-mode Power Transistor

Features •Enhancementmodetransistor–NormallyOFFswitch •Ultrafastswitching •Noreverse-recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGOT60R042D1

Marking：60R042D1；Package：PG-DSO-20-87；600V CoolGaN™ enhancement-mode Power Transistor

Features •Enhancementmodetransistor–NormallyOFFswitch •Ultrafastswitching •Noreverse-recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGOT60R070D1

Marking：60R070D1；Package：PG-DSO-20-87；600V CoolGaN??enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGT60R042D1

Marking：60R042D1；Package：PG-HSOF-8-3；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD