IPB60R080P7

Marking：60R080P7；Package：PG-TO263-3；600V CoolMOS짧 P7 Power Transistor

600VCoolMOSP7PowerTransistor Potentialapplications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

IPB60R090CFD7

Marking：60R090F7；Package：PG-TO263-3；MOSFET 600V CoolMOS짧 CFD7 Power Transistor

MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanopti

IPB60R099P7

Marking：60R099P7；Package：PG-TO263-3；600V CoolMOS짧 P7 Power Transistor

600VCoolMOSP7PowerTransistor Potentialapplications   PFCstages,hardswitchingPWMstagesandresonantswitchingstages   fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom   andUPS.

IPB60R105CFD7

Marking：60R105F7；Package：PG-TO263-3；600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPB60R210CFD7

Marking：60R210F7；Package：PG-TO263-3；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPB60R280CFD7

Marking：60R280F7；Package：PG-TO263-3；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPB60R360CFD7

Marking：60R360F7；Package：PG-TO263-3；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPD60R180CM8

Marking：60R180C8；Package：PG-TO252-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPD60R180P7

Marking：60R180P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

MOSFET600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P

IPD60R180P7S

Marking：60S180P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

MOSFET600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P