IPDQ60R007CM8

Marking：60R007C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPDQ60R010S7A

Marking：60A010S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7A Power Device

Features •Optimizedforlowswitchingfrequencyinhigh-endapplications(circuit breakersanddiodeparalleling/replacementinbridgerectifiers). •S7AtechnologyenablesbestinclassRDS(on)insmallestfootprint. •KelvinSourcepinimprovesswitchingperformanceathighcurrent. •QDPA

IPDQ60R015CFD7

Marking：60R015F7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg

IPDQ60R016CM8

Marking：60R016C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPDQ60R017S7

Marking：60R017S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables17mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •KelvinSourcepinimprovesswitchingperformanceathighcurrent •QDPAK(PG-HDSOP-22-1)offerstopsidecoo

IPDQ60R017S7A

Marking：60A017S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7A Power Device

Features •Optimizedforlowswitchingfrequencyinhigh-endapplications(circuit breakersanddiodeparalleling/replacementinbridgerectifiers). •S7AtechnologyenablesbestinclassRDS(on)insmallestfootprint. •KelvinSourcepinimprovesswitchingperformanceathighcurrent. •QDPA

IPDQ60R020CFD7

Marking：60R020F7；Package：PG-HDSOP-22；600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Potentialapplications SuitableforSoftS

IPDQ60R022S7

Marking：60R022S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenables22mWRDS(on)inthesmallestfootprint •Optimizedpriceperformanceinlowfrequencyswitchingapplications •Highpulsecurrentcapability •KelvinSourcepinimprovesswitchingperformanceathighcurrent •QDPAK(PG-HDSOP-22-1)offerstopsidecoo

IPDQ60R022S7A

Marking：60A022S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7A Power Device

Features •Optimizedforlowswitchingfrequencyinhigh-endapplications(circuit breakersanddiodeparalleling/replacementinbridgerectifiers). •S7AtechnologyenablesbestinclassRDS(on)insmallestfootprint. •KelvinSourcepinimprovesswitchingperformanceathighcurrent. •QDPA

IPDQ60R024CM8

Marking：60R024C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features •Best‑In‑ClassSJMosfetPerformance •Addressbroadhardandsoftswitchingapplicationswithoutstanding commutationruggedness •IntegratedfastbodydiodeandESDprotection •.XTinterconnectiontechnologyforbest‑in‑classthermalperformance Benefits •Providesthebestp