IPD60R1K0CE

Marking：60S1K0CE；Package：PG-TO252；600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

IPD60R1K5PFD7S

Marking：60S1K5D7；Package：PG-TO252-3；600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode

IPD60R210PFD7S

Marking：60S210D7；Package：PG-TO252-3；600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations

IPD60R280PFD7S

Marking：60S280D7；Package：PG-TO252-3；600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode

IPD60R2K0PFD7S

Marking：60S2K0D7；Package：PG-TO252-3；600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode

IPD60R600CM8

Marking：60R600C8；Package：PG-TO252-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPD60R600PFD7S

Marking：60S600D7；Package：PG-TO252-3；600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode

IPD60R650CE

Marking：60S650CE；Package：PG-TO252；600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

IPDD60R037CM8

Marking：60R037C8；Package：PG-HDSOP-10；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

IPDD60R180CM8

Marking：60R180C8；Package：PG-HDSOP-10；MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug