IPDQ60T010S7A

Marking：60T010S7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª SJ S7A Power Device

Features •CoolMOS™S7AtechnologyenableslowestRDS(on)andhighpulse currentcapabilityinthesmallestfootprint •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Seamlessdiagnosticsatlowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthe

IPDQ60T017S7

Marking：60I017S7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª SJ S7 Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatthelowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilizationcost Benefits •Reductionofexternalsensing

IPDQ60T017S7A

Marking：60T017S7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª SJ S7TA Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatlowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilization Benefits •Reductionofexternalsensingelements

IPDQ60T022S7

Marking：60I022S7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª SJ S7 Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatthelowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilizationcost Benefits •Reductionofexternalsensing

IPDQ60T022S7A

Marking：60T022S7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª SJ S7TA Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatlowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilization Benefits •Reductionofexternalsensingelements

IPDQ60T040S7A

Marking：60T040S7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª SJ S7TA Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatlowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilization Benefits •Reductionofexternalsensingelements

IPL60R060CFD7

Marking：60R060F7；Package：PG-VSON-4；600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPL60R225CFD7

Marking：60R225F7；Package：PG-VSON-4；MOSFET 600V CoolMOS짧 CFD7 Power Transistor

MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanopti

IPN60R2K0PFD7S

Marking：60S2K0D7；Package：PG-SOT223；600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode

IPN60R2K1CE

Marking：60S2K1；Package：PG-SOT223；600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications