丝印：33N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.6 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：33N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.47 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：33N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：488.68 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：33N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =33A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：172.8 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：33N60DM6；Package：D2PAK；N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-cha

文件：424.76 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：33N60DM2；Package：TO-220FP；N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of

文件：709.93 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：33N60M2；Package：D2PAK；N-channel 600 V, 0.108 廓 typ., 26 A MDmesh II Plus??low Qg Power MOSFETs in a D2PAK package

文件：1.05938 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：33N65M2；Package：D2PAK；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：33N65M2；Package：TO-220FP；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：33N65M2；Package：I2PAK；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体