丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

文件：1.19028 Mbytes 页数：35 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

文件：1.048109 Mbytes 页数：33 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

文件：1.048109 Mbytes 页数：33 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

文件：1.19028 Mbytes 页数：35 Pages

TI

德州仪器