丝印：33R；Package：SOT-89-3；45V Io=300mA LDO

■FEATURES ● Fast Transient Response ● Operating Voltage 4.0V to 40V ● Operating Temperature Ta=-40 C to 125°C ●Output Voltage Accuracy VO 1.0(Ta=25 C) VO 1.5(Ta=-40 C to 125°C) ● Output Current IO(min.)=300mA ● ON/OFF Control A ver. only ● Correspond to MLCC ● Under Voltage Lock Out circu

文件：952.61 Kbytes 页数：17 Pages

NJRCNew Japan Radio

新日本无线株式会社

丝印：33RL10H；Package：LFPAK56D；N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low bo

文件：337.57 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：33RH；Package：WSON；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1 Features • Ultra-low input voltage range: 0.7 V to 2.2 V • High efficiency: – Dropout voltage at 1 A: 70 mV (max, YBK) – Specified for VIN = VOUT +100 mV • Excellent load transient response: – 20 mV for ILOAD = 3 mA to 600 mA in 20 μs • Accuracy over load, line, and temperature: 1 • High

文件：3.92497 Mbytes 页数：38 Pages

TI

德州仪器

丝印：33RH；Package：WSON；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1 Features • Ultra-low input voltage range: 0.7 V to 2.2 V • High efficiency: – Dropout voltage at 1 A: 70 mV (max, YBK) – Specified for VIN = VOUT +100 mV • Excellent load transient response: – 20 mV for ILOAD = 3 mA to 600 mA in 20 μs • Accuracy over load, line, and temperature: 1 • High

文件：3.92588 Mbytes 页数：38 Pages

TI

德州仪器

Power Chip짰 Thick Film on Alumina Substrate

文件：239.96 Kbytes 页数：2 Pages

OHMITEOHMITE MANUFACTURING COMPANY

欧敏欧敏电阻制造公司