丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 3400 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：815.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：914.26 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：899.48 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：182.77 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features • VDS=30V RDS(ON)=33mΩ @VGS=4.5V, ID=5A RDS(ON)=52mΩ @VGS=2.5V, ID=4A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package

文件：657.42 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技

丝印：3400；Package：SOT-23；The 3400 uses advanced trench technology to provide excellent RDS(ON)

文件：1.89155 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：782.45 Kbytes 页数：7 Pages

ADV

爱德微

丝印：3400；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：857.51 Kbytes 页数：3 Pages

DOINGTER

杜因特

丝印：3400；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

文件：877.73 Kbytes 页数：3 Pages

DOINGTER

杜因特

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：861.3 Kbytes 页数：6 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd