3400

型号：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The3400usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

3400

型号：AO3400A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheAO3400AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.8A RDS(ON)

3400

型号：AO3402；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheAO3402usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.8A RDS(ON)

3400

型号：BC3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE HighdensecelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrentcapability

3400

型号：MTN3400N3；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features •VDS=30V RDS(ON)=33mΩ@VGS=4.5V,ID=5A RDS(ON)=52mΩ@VGS=2.5V,ID=4A •Lowon-resistance •Lowgatecharge •Excellentthermalandelectricalcapabilities •CompactandlowprofileSOT-23package

3400

型号：3400；Package：SOT-23；The 3400 uses advanced trench technology to provide excellent RDS(ON)

3400

型号：ADM3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

3400

型号：DO3400B；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

3400

型号：DO3400BA；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

3400

型号：FM3400A；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor