3400

Marking：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The3400usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

AO3400A

Marking：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheAO3400AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.8A RDS(ON)

AO3402

Marking：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheAO3402usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●VDS=30V,ID=5.8A RDS(ON)

BC3400

Marking：3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE HighdensecelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrentcapability

MTN3400N3

Marking：3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features •VDS=30V RDS(ON)=33mΩ@VGS=4.5V,ID=5A RDS(ON)=52mΩ@VGS=2.5V,ID=4A •Lowon-resistance •Lowgatecharge •Excellentthermalandelectricalcapabilities •CompactandlowprofileSOT-23package

3400

Marking：3400；Package：SOT-23；The 3400 uses advanced trench technology to provide excellent RDS(ON)

ADM3400

Marking：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

DO3400B

Marking：3400；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

DO3400BA

Marking：3400；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

FM3400A

Marking：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor