30V N-Channel MOSFET

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

文件：454.61 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel enhancement mode field effect transistor

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON)

文件：1.026839 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：899.48 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON)

文件：895.62 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.027829 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Plastic-Encapsulate Mosfets

FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

文件：335.95 Kbytes 页数：4 Pages

HOTTECH

合科泰

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

文件：715.88 Kbytes 页数：4 Pages

KERSEMI

丝印：A29T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

文件：2.30533 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)

文件：1.21348 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

N-Channel Enhancement Mode Field Effect Transistor

文件：111.94 Kbytes 页数：4 Pages

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