丝印：340；Package：DO-214AA；SMD Schottky Barrier Diode

Features - AEC-Q101 Qualified. - High surge current capability. - Low reverse current. - High current capability.

文件：481.22 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：340；Package：DO-214AB；SMD Schottky Barrier Rectifiers

Features -Built-in strain relief. -Silicon epitaxial planar chips. -High surge and current capability. -For use in low voltage, high frequency invertors free -wheeling and polarity protection. -Metal silicon junction with guard ring.

文件：99.34 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：340；Package：SOD-323；1-Line Uni-directional TVS Diode

文件：527.44 Kbytes 页数：8 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：340；Package：SOD-106；Schottky Barrier Rectifier

文件：275.11 Kbytes 页数：5 Pages

KODENSHI

可天士

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 3400 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：815.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：3400L；Package：SOT-23-3L；PWM applications

Description The 3400L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application PWM applications Load switch Power

文件：1.62324 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：914.26 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：899.48 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：182.77 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features • VDS=30V RDS(ON)=33mΩ @VGS=4.5V, ID=5A RDS(ON)=52mΩ @VGS=2.5V, ID=4A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package

文件：657.42 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技