SN55HVD233MDPSEP.A中文资料下载原装现货TI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SN55HVD233MDPSEP.A	文件：758.11 Kbytes Page：36 Pages	丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic 1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin 文件：758.11 Kbytes 页数：36 Pages	TI 德州仪器	TI
SN55HVD233MDTPSEP	文件：1.048109 Mbytes Page：33 Pages	3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic 文件：1.048109 Mbytes 页数：33 Pages	TI 德州仪器	TI
SN55HVD233MDTPSEP	文件：1.19028 Mbytes Page：35 Pages	3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic 文件：1.19028 Mbytes 页数：35 Pages	TI 德州仪器	TI
SN55HVD233MDTPSEP	文件：758.11 Kbytes Page：36 Pages	SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic 1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin 文件：758.11 Kbytes 页数：36 Pages	TI 德州仪器	TI

更多SN55HVD233MDPSEP.A供应商更新时间2025-12-20 10:02:00