isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.38 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：33N65M2；Package：I2PAK；N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.117 Ohm典型值、24 A MDmesh M2功率MOSFET，I2PAK封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

文件：815.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：304.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages

文件：800.37 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体