丝印：33N60DM2；Package：TO-220FP；N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of

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STMICROELECTRONICS

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