丝印：33P；Package：DFN1610-2；1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：501.59 Kbytes 页数：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：33P；Package：DFN1610-2；Ultra Low Capacitance Bi-Directional TVS Diode Array

文件：1.1991 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1• VID V62/18617 • Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) • Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 页数：36 Pages

TI

德州仪器

丝印：33PQ；Package：SOT-23；TPS382x-xx-Q1 Voltage Monitor With Watchdog Timer

1 Features • Qualified for automotive applications • AEC-Q100 Qualified With the Following Results: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • ESD protection exceeds 2000V Per MIL-STD-883, Method 3015; usi

文件：986.85 Kbytes 页数：24 Pages

TI

德州仪器

丝印：33PQ；Package：SOT-23；TPS382x-xx-Q1 Voltage Monitor With Watchdog Timer

1 Features • Qualified for automotive applications • AEC-Q100 Qualified With the Following Results: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • ESD protection exceeds 2000V Per MIL-STD-883, Method 3015; usi

文件：986.85 Kbytes 页数：24 Pages

TI

德州仪器

丝印：33PH；Package：WSON；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1 Features • Ultra-low input voltage range: 0.7 V to 2.2 V • High efficiency: – Dropout voltage at 1 A: 70 mV (max, YBK) – Specified for VIN = VOUT +100 mV • Excellent load transient response: – 20 mV for ILOAD = 3 mA to 600 mA in 20 μs • Accuracy over load, line, and temperature: 1 • High

文件：3.92497 Mbytes 页数：38 Pages

TI

德州仪器

丝印：33PH；Package：WSON；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1 Features • Ultra-low input voltage range: 0.7 V to 2.2 V • High efficiency: – Dropout voltage at 1 A: 70 mV (max, YBK) – Specified for VIN = VOUT +100 mV • Excellent load transient response: – 20 mV for ILOAD = 3 mA to 600 mA in 20 μs • Accuracy over load, line, and temperature: 1 • High

文件：3.92588 Mbytes 页数：38 Pages

TI

德州仪器