SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

文件：82.28 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol

文件：249.16 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

文件：82.28 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol

文件：249.16 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

文件：1.41358 Mbytes 页数：11 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

文件：1.41358 Mbytes 页数：11 Pages

RENESAS

瑞萨

N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested

文件：254.66 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

Silicon N Channel Power MOS FET Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

文件：1.41358 Mbytes 页数：11 Pages

RENESAS

瑞萨

Switching Regulator, DC-DC Converter and Motor Drive Applications

Switching Regulator, DC/DC Converter and Motor Drive Applications • 4 V gate drive • Low drain-source ON-resistance: RDS (ON)= 1.2 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 250 V) • Enhancement mode: Vth= 1.5~3.5

文件：235.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝