SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. Official Site : http://www.renesas.eu/products/discrete/pmosfet/gen_sw/device/2SK3435-Z.jsp

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

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RENESAS

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

DC-DC Converter, Relay Drive and Motor Drive Applications

DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON)= 0.74 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 3.0 to 5.0 V (VDS= 10 V, ID= 1 m

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TOSHIBA

东芝

Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications

DC-DC Converter, Relay Drive and Motor DriveApplications • Low drain-source ON resistance: RDS (ON)= 0.74 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 m

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

DC-DC Converter Relay Drive and Motor Drive Applications

DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON)= 3.8 mΩ(typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS= 30 V) • Enhancement mode: Vth= 1.3 to 2.5 V (

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TOSHIBA

东芝

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, I

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON)= 4.5 mΩ(typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS= 60 V) • Enhancement mode: Vth= 1.3 to 2.5 V (VDS= 10 V, ID=

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 100 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝