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2SK3434-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

文件:48.68 Kbytes 页数:4 Pages

NEC

瑞萨

2SK3434-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

文件:214.11 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SK3434-ZJ

N-Channel MOSFET

■ Features ● VDS S = 60V ● ID = 48 A (VGS = 10V) ● RDS(ON)

文件:1.02132 Mbytes 页数:2 Pages

KEXIN

科信电子

2SK3435

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件:1.28925 Mbytes 页数:7 Pages

VBSEMI

微碧半导体

2SK3435

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A) RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A) ● Low Ciss: Ciss =3200 pF TYP. ● Built-in gate protection diode

文件:45.61 Kbytes 页数:1 Pages

KEXIN

科信电子

2SK3435

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. Official Site : http://www.renesas.eu/products/discrete/pmosfet/gen_sw/device/2SK3435-Z.jsp

文件:48.56 Kbytes 页数:4 Pages

NEC

瑞萨

2SK3435

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

文件:214.13 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SK3435-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

文件:214.13 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SK3435-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. Official Site : http://www.renesas.eu/products/discrete/pmosfet/gen_sw/device/2SK3435-Z.jsp

文件:48.56 Kbytes 页数:4 Pages

NEC

瑞萨

2SK3435-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

文件:214.13 Kbytes 页数:10 Pages

RENESAS

瑞萨

技术参数

  • RDS (ON) (mohm) max. @10V or 8V:

    15

  • Downloadable:

    SPICE

  • Ciss (pF) typ.:

    3200

  • Package Type:

    MP-3/TO-251

  • Vgs (off) (V) max.:

    2.5

  • Nch/Pch:

    Nch

  • VGSS (V):

    20

  • Number of Channels:

    Single

  • Pch (W):

    40

  • Automotive:

    YES

  • Application:

    Low Voltage General Switching

  • VDSS (V) max.:

    60

  • Mounting Type:

    Through Hole

  • ID (A):

    36

  • QG (nC) typ.:

    61

  • RDS (ON) (mohm) max. @4V or 4.5V:

    22

供应商型号品牌批号封装库存备注价格
MIT
24+
3005
询价
TOSHIBA
24+/25+
1996
原装正品现货库存价优
询价
TOS
13+
TO-92S
561238
原装分销
询价
MITSUBIS
23+
TO-57
350
专营高频管模块,全新原装!
询价
TOSHIBA
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
NEC
03+
TO263
2145
全新原装进口自己库存优势
询价
NEC
24+
TO-220F
3000
全新原装环保现货
询价
NEC
16+
TO-220
10000
全新原装现货
询价
NEC
24+
SOT-263
211
原装现货假一罚十
询价
HIT
23+
SOP28L
5000
原装正品,假一罚十
询价
更多2SK34供应商 更新时间2026-1-18 10:50:00