MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

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RENESAS

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N-Channel MOSFET

■ Features ● VDS S = 60V ● ID = 48 A (VGS = 10V) ● RDS(ON)

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KEXIN

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Power MOSFETs

Renesas

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

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NEC

瑞萨

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1= 20mΩ MAX. (VGS=10V,ID= 24A) RDS(on)2=31mΩ MAX. (VGS=4V,ID= 24A) ● Low Ciss: Ciss =2100 pF TYP. ● Built-in gate protection diode

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isc N-Channel MOSFET Transistor

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ISC

无锡固电