SWITCHING REGULATOR DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 150 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：376.46 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 200 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, I

文件：202.7 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 250 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, I

文件：233.6 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N Channel Power MOS FET Power Switching

Features • Capable of 4 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 10 V)

文件：80.14 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • Capable of 4 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 10 V)

文件：80.14 Kbytes 页数：7 Pages

RENESAS

瑞萨

Ultrahigh-Speed Switching Use

Ultrahigh-Speed Switching Use Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Meets radial taping.

文件：27.58 Kbytes 页数：4 Pages

SANYO

三洋

DC / DC Converter Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：28.34 Kbytes 页数：4 Pages

SANYO

三洋

N-CHANNEL SILICON POWER MOSFET

1. Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2. Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：110.86 Kbytes 页数：4 Pages

FUJI

富士通