2SK34数据手册批发供应瑞萨ETC第20页-114ic电子网

首页 >2SK34>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3481-S	文件：76.58 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • 文件：76.58 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3481-Z	文件：76.58 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • 文件：76.58 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3481-Z	文件：211.8 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L 文件：211.8 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3481-ZJ	文件：211.8 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L 文件：211.8 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3481-ZJ	文件：76.58 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • 文件：76.58 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3482	文件：250.46 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ci 文件：250.46 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3482-Z	文件：250.46 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ci 文件：250.46 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3484	文件：241.25 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ci 文件：241.25 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3484	文件：619.4 Kbytes Page：7 Pages	N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch 文件：619.4 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3484_V01	文件：619.4 Kbytes Page：7 Pages	N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch 文件：619.4 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI

<<<15 16 17 18 192021 22 23 24 25 >>>

技术参数

RDS (ON) (mohm) max. @10V or 8V：
15
Downloadable：
SPICE
Ciss (pF) typ.：
3200
Package Type：
MP-3/TO-251
Vgs (off) (V) max.：
2.5
Nch/Pch：
Nch
VGSS (V)：
20
Number of Channels：
Single
Pch (W)：
40
Automotive：
YES
Application：
Low Voltage General Switching
VDSS (V) max.：
60
Mounting Type：
Through Hole
ID (A)：
36
QG (nC) typ.：
61
RDS (ON) (mohm) max. @4V or 4.5V：
22

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SK34	MIT	24+		3005		询价
深圳市联世界科技有限公司	2SK3498(TE16L1,NQ)	TOSHIBA	24+/25+		1996	原装正品现货库存价优	询价
深圳市粤科源兴科技有限公司	2SK3470	TOS	13+	TO-92S	561238	原装分销	询价
深圳市毅创腾电子科技有限公司	2SK3478	MITSUBIS	23+	TO-57	350	专营高频管模块,全新原装!	询价
深圳市勤思达科技有限公司	2SK3407	TOSHIBA	15+	TO-220	11560	全新原装,现货库存,长期供应	询价
深圳市益百分电子有限公司	2SK3402-Z-E1	NEC	03+	TO263	2145	全新原装进口自己库存优势	询价
千层芯半导体(深圳)有限公司	2SK3455B-S17	NEC	24+	TO-220F	3000	全新原装环保现货	询价
深圳市利加科技有限公司	2SK3407	NEC	16+	TO-220	10000	全新原装现货	询价
深圳市弘为电子有限公司	2SK3404	NEC	24+	SOT-263	211	原装现货假一罚十	询价
齐创科技(上海,北京,青岛)有限公司	2SK3464	HIT	23+	SOP28L	5000	原装正品,假一罚十	询价

更多2SK34供应商更新时间2026-1-18 10:50:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号