Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：180.61 Kbytes 页数：12 Pages

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Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：180.61 Kbytes 页数：12 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：78.47 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

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TO220

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上传：深圳市正纳电子有限公司

TO252

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瑞萨

上传：深圳市正纳电子有限公司