Load Switching Applications

Load Switching Applications Features · Low ON resistance. · 2.5V drive.

文件：44.54 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance.

文件：30.36 Kbytes 页数：4 Pages

SANYO

三洋

P CHANNEL NOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.1 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.5 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −30 V) ● Enhancement mode : Vth = −0.8 to −

文件：133.68 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

文件：51.63 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

文件：90.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION · High fast switching Power Supply

文件：319.68 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

文件：90.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

文件：93.96 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

文件：54.17 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

文件：54.17 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司