SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low saturation voltage ● Excellent DC current gain characteristics

文件：1.71209 Mbytes 页数：4 Pages

JIANGSU

长电科技

High gain amplifier transistor (25V / 2A)

Features 1)Low saturation voltage.　typically VCE(sat)=120mV at IC/IB=1A/20mA 2)High DC current gain Application LOW FREQUENCY POWER AMP

文件：1.46177 Mbytes 页数：9 Pages

ROHM

罗姆

High gain amplifier transistor (25V / 2A)

Features 1)Low saturation voltage.　typically VCE(sat)=120mV at IC/IB=1A/20mA 2)High DC current gain Application LOW FREQUENCY POWER AMP

文件：1.46177 Mbytes 页数：9 Pages

ROHM

罗姆

NPN Plastic Encapsulated Transistor

FEATURES • Small Flat Package • General Purpose Application

文件：341.18 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Plastic Encapsulated Transistor

FEATURES • Small Flat Package • General Purpose Application

文件：341.18 Kbytes 页数：2 Pages

SECOS

喜可士

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SB1429 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

文件：222.38 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SB1429 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

文件：173.91 Kbytes 页数：4 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICAITONS • Complementary to 2SB1429 • Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage.

文件：153.67 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：CFR；Package：SOT-89；Low Frequency Transistor (20V, 3A)

文件：167.26 Kbytes 页数：3 Pages

ROHM

罗姆

NPN Plastic Encapsulated Transistor

文件：313.36 Kbytes 页数：2 Pages

SECOS

喜可士