Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424. Applications General purpose amplifier.

文件：799.43 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulate Transistors

FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A

文件：249.03 Kbytes 页数：2 Pages

HOTTECH

合科泰

丝印：CFR*；Package：SOT-89；NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

文件：583.81 Kbytes 页数：3 Pages

YFWDIODE

佑风微

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent current-to-gain characteristics • Low collector saturation voltage VCE(sat) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rati

文件：725.69 Kbytes 页数：3 Pages

MCC

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent current-to-gain characteristics • Low collector saturation voltage VCE(sat) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rati

文件：725.69 Kbytes 页数：3 Pages

MCC

丝印：CFS*；Package：SOT-89；NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

文件：583.81 Kbytes 页数：3 Pages

YFWDIODE

佑风微

NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

文件：2.53303 Mbytes 页数：3 Pages

YFWDIODE

佑风微

TRANSISTOR NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.5 W Tamb=25°C Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

文件：24.22 Kbytes 页数：1 Pages

JIANGSU

长电科技

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

文件：113.77 Kbytes 页数：3 Pages

ROHM

罗姆

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

文件：113.77 Kbytes 页数：3 Pages

ROHM

罗姆