Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件：68.61 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SB1020 • DARLINGTON APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件：68.78 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SB1020 • DARLINGTON APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件：129.55 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

文件：212.28 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

文件：84.17 Kbytes 页数：3 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

文件：183.27 Kbytes 页数：4 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件：156.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件：156.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A • High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V • Complement to Type 2SB1021 APPLICATIONS • Hammer driver,pulse motor drive applications.

文件：244.88 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件：70.45 Kbytes 页数：3 Pages

ISC

无锡固电