NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

文件：183.27 Kbytes 页数：4 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件：156.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

文件：84.17 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

文件：212.28 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：213.89 Kbytes 页数：3 Pages

SAVANTIC

High-Power Switching Applications

文件：162.2 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件：156.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Power Switching Applications

文件：162.2 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for low frequency applications

Feature：Built-in damper diode / Darlington\nPolarity：NPN\nComplementary Product：2SB1020A\nRoHS Compatible Product(s) (#)：Available Collector Current IC 7 A \nCollector-emitter voltage VCEO 100 V ;

Toshiba

东芝