isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS • Igniter applications • High voltage switching applications

文件：147.75 Kbytes 页数：3 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)

文件：163.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications

文件：184.19 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications

文件：167.85 Kbytes 页数：4 Pages

SAVANTIC

NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

High-Current Switching Applications Power Amplifier Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A

文件：184.26 Kbytes 页数：4 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) • Complement to Type 2SB1019 APPLICATIONS • High current switching applications. • Power amplifier applications.

文件：254.35 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件：68.58 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件：128.75 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件：128.91 Kbytes 页数：3 Pages

SAVANTIC

RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS

DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806 - 866 MHz frequency range. Internal input matching and common base configuration assure optimum gain and efficiency across the entire frequency band. The SD1414 withst

文件：62.89 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体