isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS • Igniter applications • High voltage switching applications

文件：147.75 Kbytes 页数：3 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)

文件：163.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

High Voltage Switching Applications

文件：146.7 Kbytes 页数：4 Pages

TOSHIBA

东芝

High Voltage Switching Applications

文件：146.7 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power transistor for low frequency applications

Feature：Darlington\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 6 A \nCollector-emitter voltage VCEO 250 V ;

Toshiba

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