Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.88 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.82 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type(For power amplification)

For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A ■Features ● High collector to emitter VCEO ● High collector power dissipation PC ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of

文件：49.14 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type packag

文件：48.91 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN triple diffusion junction type(For power amplification)

For power amplification ■ Features ● Wide area of safe operation (ASO) ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

文件：50.84 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Triple Diffusion Junction Type

■ Features • Wide area of safe operation.

文件：41.89 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.91 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.91 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.85 Kbytes 页数：2 Pages

ISC

无锡固电