Silicon NPN Triple Diffusion Junction Type

Features ● Power transistors.

文件：42.85 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the

文件：49.52 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •Low collector-emitter saturation voltage VCE(sat) •N type package enabling direct soldering of the ra

文件：49.75 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：297.15 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：278.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：297.15 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：278.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •Low collector-emitter saturation voltage VCE(sat) •N type package enabling direct soldering of the ra

文件：49.75 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the

文件：49.52 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching Complementary to 2SB931 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiat

文件：58.35 Kbytes 页数：3 Pages

PANASONIC

松下