MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：38.76 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

文件：389.87 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

文件：389.87 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

文件：51.33 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

文件：51.33 Kbytes 页数：2 Pages

PANASONIC

松下

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

文件：97.06 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

文件：99.14 Kbytes 页数：4 Pages

SANYO

三洋

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

文件：57.4 Kbytes 页数：5 Pages

SANYO

三洋