isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 300V(Min) ·High DC Current Gain: hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications.

文件：248.15 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications

文件：57.56 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Triple Diffused

Application High voltage switching, igniter

文件：32.91 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications

文件：97.73 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A • Wide Area of Safe Operation • Complement to Type 2SB850 APPLICATIONS • Designed for audio amplifier, series regulators and general purpose power

文件：248.08 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·High DC Current Gain-: hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power am

文件：250.05 Kbytes 页数：2 Pages

ISC

无锡固电

TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING

Features ● High speed switching ● High D.C current gain ● Low saturation voltage ● High reliability Applications ● Switching regulators ● DC-DC converter ● Solid state relay ● General purpose power amplifier

文件：100.4 Kbytes 页数：3 Pages

FUJI

富士通

Silicon NPN epitaxial planer type(For low-frequency power amplification0

Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Mini type package, allowing downsizing of the equipment an

文件：38.62 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planar type

FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply.

文件：166.33 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply.

文件：516.409 Kbytes 页数：2 Pages

HTSEMI

金誉半导体