MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain. FEATURES • Low Noise NF

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NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct

文件：1.07911 Mbytes 页数：5 Pages

CEL

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride p

文件：102.16 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride pa

文件：323.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) wh

文件：329.19 Kbytes 页数：10 Pages

RENESAS

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) whic

文件：107.18 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. NE68039 / 2SC4095 features excellent power gain with very low-noise figures. NE68039 / 2SC4095 employs direct nitiride passivated base surf

文件：1.12648 Mbytes 页数：6 Pages

CEL

丝印：T106；Package：UMT3；Medium Power Transistor (32V, 0.5A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：74.94 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

文件：153.23 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● High ICMax. ICMax=0.5A ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1577

文件：1.19965 Mbytes 页数：1 Pages

HTSEMI

金誉半导体