NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SC4001 is designed for use of high-resolution monitor TV applications. This makes it possible to raise the video band of high-resolution monitor TVs to 50 MHz.

文件：130.78 Kbytes 页数：2 Pages

NEC

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. FEATURES • Collector–Emitter Sustaining Voltage- : VCBO = 300 V(Min) • Complement to Type 2SA1546

文件：189.9 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Driver Applications???

High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.

文件：73.03 Kbytes 页数：3 Pages

SANYO

三洋

High-Voltage Driver Applications?

High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.

文件：78.26 Kbytes 页数：3 Pages

SANYO

三洋

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

文件：373.85 Kbytes 页数：2 Pages

JIANGSU

长电科技

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：280.4 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Triple Diffused Planar Silicon Transistor

Features ● High breakdown voltage ● Adoption of MBIT process ● Excellent hFE linearity

文件：46.74 Kbytes 页数：2 Pages

KEXIN

科信电子

isc Silicon NPN Power Transistor

DESCRIPTION • High hFE • Low collector-to-emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High switching applications

文件：328.07 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299.53 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：124.74 Kbytes 页数：1 Pages

WINNERJOIN

永而佳