MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) whic

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NEC

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MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. NE68039 / 2SC4095 features excellent power gain with very low-noise figures. NE68039 / 2SC4095 employs direct nitiride passivated base surf

文件：1.12648 Mbytes 页数：6 Pages

CEL

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) wh

文件：329.19 Kbytes 页数：10 Pages

RENESAS

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件：329.19 Kbytes 页数：10 Pages

RENESAS

瑞萨

Package：TO-253-4，TO-253AA；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 10GHZ SOT143

CEL

Package：TO-253-4，TO-253AA；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 10GHZ SOT143

CEL