Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

文件：133.18 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Low Collector Capacitance ● High Gain

文件：407.9 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min) ·DC Current Gain- : hFE= 56(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

文件：299.49 Kbytes 页数：3 Pages

ISC

无锡固电

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector Capacitance ● High Gain

文件：695.81 Kbytes 页数：3 Pages

JIANGSU

长电科技

High-frequency Amplifier Transistor

Features ● Low collector capacitance. (Cob : Typ. 1.3pF) ● Low rbb, high gain, and excellent noise characteristics.

文件：45.25 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Plastic-Encapsulate Transistor

FEATURES • Low Collector Capacitance. • High Gain.

文件：83.33 Kbytes 页数：1 Pages

SECOS

喜可士

SOT-323 Plastic-Encapsulate Transistors

FEATURES Low Collector Capacitance High Gain

文件：1.58913 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features High transition frequency, small collector output capacitance complementary pair. Applications Audio frequency amplifier applications.

文件：742.14 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

High-frequency Amplifier Transistor(25V, 50mA, 300MHz)

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

文件：80.48 Kbytes 页数：4 Pages

ROHM

罗姆

High-frequency Amplifier Transistor

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

文件：105.59 Kbytes 页数：3 Pages

ROHM

罗姆