Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

文件：133.18 Kbytes 页数：3 Pages

BILIN

银河微电

Silicon Epitaxial Planar Transistor

Galaxy

银河微电

Medium Power Transistor

FEATURES • High ICMax. ICMax=0.5A. • Low VCE(sat). Optimal for low voltage operation. • Complementary to 2SA1577

文件：105.68 Kbytes 页数：3 Pages

SECOS

喜可士

Medium Power Transistor

Features ● High ICMax. ICMax. = 0.5A ● Low VCE(sat). Optimal for low voltage operation.

文件：83.39 Kbytes 页数：2 Pages

KEXIN

科信电子

Medium Power Transistor (32V, 0.5A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：74.94 Kbytes 页数：4 Pages

ROHM

罗姆