NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

C1969, 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

文件：145.11 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

isc Silicon NPN Power Transistor

DESCRIPTION ·High Power Gain-: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.

文件：219.08 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

文件：219.34 Kbytes 页数：2 Pages

ISC

无锡固电

silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：153.08 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1971 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package

文件：63.94 Kbytes 页数：1 Pages

ASI

isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

文件：219.27 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C1971；Package：T-30E；NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：127.93 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：127.93 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package

文件：63.47 Kbytes 页数：1 Pages

ASI

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

文件：130.09 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机