NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

C1969, 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

文件：145.11 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

isc Silicon NPN Power Transistor

DESCRIPTION ·High Power Gain-: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.

文件：219.08 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

文件：129.69 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

10 to 14 watts output power class AB ampliflers applications in HF band.

文件：310.54 Kbytes 页数：3 Pages

ELEFLOW

NPN Epitaxial Planar Type

C1969, 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

MITSUBISHI

三菱电机