2SC1969

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

C1969,2SC1969isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications.

2SC1969

isc Silicon NPN Power Transistor

DESCRIPTION ·HighPowerGain-:Gpe≥12dB,f=27MHz,PO=16W ·HighReliability APPLICATIONS ·Designedfor10~14wattsoutputpowerclassABamplifiersapplicationsinHFband.

2SC1969

NPN Epitaxial Planar Type

C1969, 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.;

2SC1969

Silicon NPN Power Transistor

2SC1969

10 to 14 watts output power class AB ampliflers applications in HF band.