NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band portable or hand-held radio applications)

DESCRITION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES ● High power gain: Gpe ≥ 13dB @VCC = 7.2V, PO = 0.2W, f = 175MHz ● Emitter ballasted construction, gold metallization for high

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MITSUBISHI

三菱电机

RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE

DESCRITION\n2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.FEATURES\n● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reli ● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-92 similar package is combinient for mountingAPPLICATION\n   Driver amplifiers in general in VHF band portable or hand-held;

MITSUBISHI

三菱电机

TO-220

FAIRCHILD/仙童

上传：深圳市拓亿芯电子有限公司

TO-220

Slkor(萨科微

上传：深圳市华康联电子科技有限公司

T0-220

SANYO/三洋

上传：深圳广友电子有限公司