isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

文件：219.34 Kbytes 页数：2 Pages

ISC

无锡固电

0.8 to 1 watts output power amplifiers and driver in VHF band mobille radio applications.

文件：254.94 Kbytes 页数：3 Pages

ELEFLOW

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

DESCRIPTION\n2SC1970, C1970 is a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF band mobile radio applications.FEATURES\n● High power gain: Gpe ≥ 9.2dB\n   @VCC = 13.5V, PO = 1W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliabilit ● High power gain: Gpe ≥ 9.2dB\n   @VCC = 13.5V, PO = 1W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-220 package similarly is combinient for mountingAPPLICATION\n   0.8 to 1 watts output power amplifiers and driver in VHF ba;

MinebeaMitsumi

美蓓亚三美

T0220

三凌

上传：深圳广友电子有限公司

T0220

MIT

上传：深圳广友电子有限公司