2SC1972

Silicon NPN RF Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=17V(Min) APPLICATIONS ·10to14WattsOutputPowerAmplifiersInVHFBandMobileRadioApplications.

2SC1973

TRANSISTOR NPN EPITAXIAL PLANAR

2SC1973 RFAmplifierandDriver Features ●Highgain ●HighfT ●LowCob 2SC1980 HighVoltage,Low-noiseAmplifier ComplementaryPairwith2SA921 Features ●HighVCEO ●LowNV 2SC2076 RFAmplifier Features ●SuitableforRFamp.,OSC,mix.andIFamp.inFM/AMradios. ●Largewith

2SC1974

Si NPN Epitaxial Planar

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2SC1975

Si NPN Epitaxial Planar

SiNPNEpitaxialPlanar TransceiverPowerOutput Features •Withstandsworstoverloadconditions. •VCBO=120V

2SC1975

Silicon NPN Power Transistor

DESCRIPTION •Collector-BaseBreakdownVoltage:V(BR)CBO=160V(Min) •Withstandsworstoverloadconditions. APPLICATIONS •Designforusedintransceiverpoweroutputapplications

2SC1975

Withstands worst overload conditions.

DESCRIPTION •Collector-BaseBreakdownVoltage:V(BR)CBO=160V(Min) •Withstandsworstoverloadconditions. APPLICATIONS •Designforusedintransceiverpoweroutputapplications

2SC1980

Silicon NPN epitaxial planer type

2SC1973 RFAmplifierandDriver Features ●Highgain ●HighfT ●LowCob 2SC1980 HighVoltage,Low-noiseAmplifier ComplementaryPairwith2SA921 Features ●HighVCEO ●LowNV 2SC2076 RFAmplifier Features ●SuitableforRFamp.,OSC,mix.andIFamp.inFM/AMradios. ●Largewith

2SC1983

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

2SC1984L

NPN Silicon General Purpose Transistor

FEATURE •LowcollectortoemittersaturationvoltageVCE(sat). •Complementarypairwith2SA683and2SA684.

2SC1985

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SA770/771 ·Lowcollectorsaturationvoltage APPLICATIONS ·Forgeneralandindustrialpurposeapplications