Silicon NPN RF Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 17V(Min) APPLICATIONS · 10 to 14 Watts Output Power Amplifiers In VHF Band Mobile Radio Applications.

文件：257.649 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR NPN EPITAXIAL PLANAR

2SC1973 RF Amplifier and Driver Features ● High gain ● High fT ● Low Cob 2SC1980 High Voltage, Low-noise Amplifier Complementary Pair with 2SA921 Features ● High VCEO ● Low NV 2SC2076 RF Amplifier Features ● Suitable for RF amp., OSC, mix. and IF amp. in FM/AM radios. ● Large with

文件：227.33 Kbytes 页数：6 Pages

PANASONIC

松下

Si NPN Epitaxial Planar

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文件：37.71 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Withstands worst overload conditions.

DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications

文件：188.71 Kbytes 页数：2 Pages

ISC

无锡固电

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar Transceiver Power Output Features • Withstands worst overload conditions. • VCBO = 120V

文件：37.03 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications

文件：123.7 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN epitaxial planer type

2SC1973 RF Amplifier and Driver Features ● High gain ● High fT ● Low Cob 2SC1980 High Voltage, Low-noise Amplifier Complementary Pair with 2SA921 Features ● High VCEO ● Low NV 2SC2076 RF Amplifier Features ● Suitable for RF amp., OSC, mix. and IF amp. in FM/AM radios. ● Large with

文件：37.26 Kbytes 页数：2 Pages

PANASONIC

松下

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：64.66 Kbytes 页数：1 Pages

WINGS

永盛电子

NPN Silicon General Purpose Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Complementary pair with 2SA683 and 2SA684.

文件：172.88 Kbytes 页数：3 Pages

SECOS

喜可士

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications

文件：99.75 Kbytes 页数：3 Pages

SAVANTIC