Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Excellent hFE linearity1Watt output amplifier applications, complementary pair with 2SA562TM. Applications Audio frequency power amplifier, driver stage amplifier and switching applications.

文件：949.41 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

文件：59.47 Kbytes 页数：1 Pages

TEL

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

文件：277.19 Kbytes 页数：3 Pages

MCC

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Excellent hFE Linearity, complementary pair with 2SA562M. Applications Audio frequency low power amplifier,driver stage amplifier and switching applications.

文件：662.94 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

文件：277.19 Kbytes 页数：3 Pages

MCC

丝印：C1959；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearlity

文件：1.82637 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

文件：277.19 Kbytes 页数：3 Pages

MCC

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1966 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications.

文件：133.97 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1967 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications.

文件：209.5 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1968 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications.

文件：129.6 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机