NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

文件：132.77 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

文件：130.5 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

文件：240.96 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

文件：252.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The 2SC1946Ais Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

文件：35.12 Kbytes 页数：1 Pages

ASI

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

文件：135.17 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em

文件：126.18 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

HIGH POWER TRANSISTOR SILICON NPN

HIGH POWER TRANSISTOR SILICON NPN

文件：88.92 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification

文件：118.27 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification

文件：134.57 Kbytes 页数：4 Pages

ISC

无锡固电