丝印：T114；Package：HRT；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2052 APPLICATIONS • Designed for high power amplifications.

文件：248.94 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2052 APPLICATIONS • Designed for high power amplifications.

文件：126.55 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which ca

文件：51.37 Kbytes 页数：3 Pages

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2052 • High transition frequency • Wide area of safe operation APPLICATIONS • For high power amplification

文件：122.77 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications

文件：138.8 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications

文件：138.73 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2058 • Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

文件：189.12 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector Saturation Voltage- : VCE(sa.f -1.0V(Max)@ (lc= -2A,IB= -0.2A) • Complement to Type 2SD2058 APPLICATIONS • Designed for general purpose applications.

文件：131.56 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2058 • Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

文件：253.32 Kbytes 页数：4 Pages

SAVANTIC