Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose

文件：25.32 Kbytes 页数：1 Pages

SANKEN

三垦

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@IC= -8A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Driver for chopper regulator, DC motor driver and general purpose appl

文件：263.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high power amplificati

文件：267.7 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier

文件：130.91 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Low VCE(sat) Transistor

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：52.38 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

文件：183.08 Kbytes 页数：2 Pages

SECOS

喜可士

SOT-89-3L Plastic-Encapsulate PNP Transistors

FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

文件：1.01929 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：AEQ；Package：SOT-89；Low VCE(sat) Transistor(-20V,-3A)

FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Excellent DC current gain characterisitics. Complementary the 2SD2150. APPLICATIONS This device is designed as a general purpose amplifier and switching.

文件：493.57 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：109.45 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA).

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

文件：132.74 Kbytes 页数：2 Pages

MAKOSEMI

美科半导体