Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics. Applications General purpose amplifier.

文件：781.09 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：629.64 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

文件：203.17 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：61.39 Kbytes 页数：1 Pages

TEL

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

文件：1.61084 Mbytes 页数：4 Pages

JIANGSU

长电科技

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

文件：72.21 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：AE*；Package：SOT-89；Low VCE(sat) Transistor

FEATURES ● Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ● Excellent DC current gain characterisitics. ● Complementary the 2SD2150. APPLICATIONS ● This device is designed as a general purpose amplifier and switching.

文件：187.19 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES ● Excellent DC Current Gain ● Low Collector-emitter saturation voltage ● Complement the 2SD2150

文件：260.769 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

文件：150.48 Kbytes 页数：2 Pages

UTC

友顺

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

文件：254.94 Kbytes 页数：4 Pages

WEITRON