PNP Plastic Encapsulated Transistor

FEATURES ● General Purpose Switching and Amplification

文件：83.92 Kbytes 页数：1 Pages

SECOS

喜可士

Silicon PNP transistor in a TO-92 Plastic Package

Description Silicon PNP transistor in a TO-92 Plastic Package Features Low saturation voltage. Applications For DC-DC conversion.

文件：836.33 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：B1426；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

文件：1.37742 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Power transistor (-20V, -2A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

文件：61.15 Kbytes 页数：2 Pages

ROHM

罗姆

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

文件：57.46 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor

■ Features ● Low saturation voltage, ● Excellent DC current gain characteristics.

文件：49.34 Kbytes 页数：1 Pages

KEXIN

科信电子

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

文件：57.46 Kbytes 页数：3 Pages

ROHM

罗姆

PNP Low Vce(sat) Transistor

Voltage 20V Current 3A Features • Silicon PNP epitaxial type • Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA • High collector current capability • Excellent DC current gain characteristics • Lead free in compliance with EU RoHS 2011/65/EU directive. • Green molding compound as per IEC61249

文件：227.55 Kbytes 页数：5 Pages

PANJIT

強茂

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：313.25 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon PNP Power Transistor

DESCRIPTION • High Current Capability • High Power Dissipation • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-180V(Min) • Complement to Type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications

文件：132.99 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司