Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.

文件：101.55 Kbytes 页数：3 Pages

ROHM

罗姆

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

文件：150.48 Kbytes 页数：2 Pages

UTC

友顺

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

文件：150.48 Kbytes 页数：2 Pages

UTC

友顺

丝印：AEQ；Package：SOT-89；PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：629.64 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：AER；Package：SOT-89；PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：629.64 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

文件：72.21 Kbytes 页数：4 Pages

ROHM

罗姆

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

文件：150.48 Kbytes 页数：2 Pages

UTC

友顺

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● General Purpose Switching and Amplification

文件：370.55 Kbytes 页数：3 Pages

JIANGSU

长电科技

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for DC-to-DC converter applications.

文件：215.23 Kbytes 页数：1 Pages

DCCOM

道全

丝印：B1426；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

文件：1.37742 Mbytes 页数：4 Pages

DGNJDZ

南晶电子